Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1994-08-12
1997-03-11
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429823, 4272481, C23C 1434, C23C 1600
Patent
active
056097379
ABSTRACT:
A method for manufacturing thin films in which a first film is formed on a substrate using chemical-vapor deposition (CVD), and a second film is formed on the substrate using sputtering, wherein the processes are sequentially performed in the same deposition chamber without exposing the substrate to an oxidative atmosphere. The deposition chamber includes a first electrode, and a second electrode located under the first electrode. During the CVD process, a dummy target is mounted on the first electrode and the substrate is mounted on the second electrode, a reactive gas is introduced into the chamber, and high frequency electrical power is applied to both the first and second electrodes, thereby causing the constituents of the reactive gas to deposit on the substrate to form the first film. Subsequently, any remaining reactive gas is removed from the chamber and an automated mechanism removes the dummy target from the first electrode and stores the dummy target in a storage chamber. A sputtering electrode is then mounted on the first electrode and a sputtering gas is introduced into the reaction chamber. High frequency electrical power is then applied to both the first and second electrodes, thereby causing the sputtering gas and sputtering target to deposit the second film on the substrate.
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Aihara Masami
Fukuda Koichi
Fukui Hirofumi
Iwasaki Chisato
Kasama Yasuhiko
Bever Patrick T.
Frontec Incorporated
Nguyen Nam
Shoup Guy W.
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