Process for removing deposits from backside and end edge of semi

Fishing – trapping – and vermin destroying

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437228, 437233, 148DIG51, 156643, 156646, 156657, 156662, 427 38, 427 39, 118 501, 118620, H01L 2100, H01L 2102, H01L 21306

Patent

active

050752561

ABSTRACT:
A method and apparatus are disclosed for removing one or more materials deposited on the backside and end edges of a semiconductor wafer which comprises urging the front side of the wafer against a faceplate in a vacuum chamber; flowing one or more gases through a space maintained between the front side of the wafer and the faceplate; and forming a plasma in a gap maintained between the backside of the wafer and susceptor to remove materials deposited on the backside and end edge of the wafer; the gas flowing through the space between the front side of the wafer and the faceplate acting to prevent the plasma from removing materials on the front side of the wafer.
In a preferred embodiment, the front side of the wafer is spaced from the faceplate by providing a generally circular recess in the faceplate having a depth corresponding to the desired spacing and having a diameter larger than the diameter of the wafer with spacing means in the recessed area to engage portions of the wafer to permit gas to flow through the recess and around the end edge of the wafer to inhibit removal of materials from the front surface of the wafer by the plasma.

REFERENCES:
patent: 3907660 (1975-09-01), Gillery
patent: 4113599 (1978-09-01), Gillery
patent: 4300989 (1981-11-01), Chang
patent: 4629635 (1986-12-01), Brors
patent: 4637853 (1987-01-01), Bumble et al.
patent: 4664938 (1987-05-01), Walker
patent: 4692344 (1987-09-01), Kaganowicz et al.
patent: 4736087 (1988-04-01), Whitlock et al.
patent: 4738748 (1988-04-01), Kisa
patent: 4960488 (1990-10-01), Law et al.
patent: 4962049 (1990-10-01), Chang et al.
Coburn, J., Plasma-Assisted Etching, Plasma Chemistry and Plasma Processing, vol. 2, No. 1, 1982, pp. 1-7.

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