Semiconductor device

Details Semiconductor device Semiconductor device

2010-09-15

2011-12-27

Matthews, Colleen (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21552

Reexamination Certificate

active

08084833

ABSTRACT:
Provided is a LOCOS offset MOS field-effect transistor in which a first lightly-doped N-type drain offset region with a LOCOS oxide film and a second lightly-doped N-type drain offset region without a LOCOS oxide film are formed in a drain-side offset region, and both the regions are covered with a gate electrode. Provision of the first lightly-doped N-type drain offset region mitigates an electric field applied to the first lightly-doped N-type drain offset region to increase a breakdown voltage. Provision of the second lightly-doped N-type drain offset region increases carriers within the second lightly-doped N-type drain offset region to obtain a high current drivability.

REFERENCES:
patent: 5627394 (1997-05-01), Chang et al.
patent: 6306700 (2001-10-01), Yang
patent: 6784490 (2004-08-01), Inoue et al.
patent: 6841837 (2005-01-01), Inoue
patent: 2003/0109112 (2003-06-01), Wu
patent: 2009/0032870 (2009-02-01), Iida
Patent Abstracts of Japan, publication No. 11-026766, publication date Jan. 29, 1999.

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