Controlled quantum dot growth

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

Reexamination Certificate

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C438S479000, C438S962000

Reexamination Certificate

active

08076217

ABSTRACT:
The present disclosure generally relates to techniques for controlled quantum dot growth as well as a quantum dot structures. In some examples, a method is described that includes one or more of providing a substrate, forming a defect on the substrate, depositing a layer on the substrate and forming quantum dots along the defect.

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