Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-28
2011-12-06
Matthews, Colleen (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27103
Reexamination Certificate
active
08072018
ABSTRACT:
A semiconductor device is provided. The semiconductor device comprises a substrate. A lamination structure is on the substrate along a first direction. The lamination structure comprises a plurality of conductive layers arranged from bottom to top and separated from each other, and each of the conductive layers has a channel region and an adjacent source/drain doped region along the first direction. A first gate structure is on a sidewall of the channel region of each conductive layer. The first gate structure comprises an inner first gate insulating layer and an outer first gate conductive layer.
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Taiwan Patent Office, Notice of Allowance, Patent Application Serial No. 096124452, Jan. 28, 2011, Taiwan.
Chen Wei-Su
Tsai Ming-Jinn
Industrial Technology Research Institute
Matthews Colleen
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