Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2008-07-10
2011-11-15
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C438S464000, C438S465000, C257SE21599
Reexamination Certificate
active
08058150
ABSTRACT:
A method for singulating semiconductor wafers is disclosed. A preferred embodiment comprises forming scrub lines on one side of the wafer and filling the scrub lines with a temporary fill material. The wafer is then thinned by removing material from the opposite side of the wafer from the scrub lines, thereby exposing the temporary fill material on the opposite side. The temporary fill material is then removed, and the individual die are removed from the wafer.
REFERENCES:
patent: 6649445 (2003-11-01), Qi et al.
patent: 6908784 (2005-06-01), Farnworth et al.
patent: 7199449 (2007-04-01), Lake
patent: 2006/0068567 (2006-03-01), Beyne et al.
patent: 2006/0079072 (2006-04-01), David et al.
patent: 2010/0233867 (2010-09-01), Akiyama et al.
patent: WO 2008/002790 (2008-01-01), None
Chiou Wen-Chih
Hu Jung-Chih
Wu Weng-Jin
Yang Ku-Feng
Yu Chen-Hua
Pert Evan
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Particle free wafer separation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Particle free wafer separation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Particle free wafer separation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4311851