Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-09-11
2011-12-27
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S316000, C257S288000, C257S410000, C257SE29128, C257SE29129, C257SE29112
Reexamination Certificate
active
08084824
ABSTRACT:
A method for fabricating metal gate transistor is disclosed. First, a substrate having a first transistor region and a second transistor region is provided. Next, a stacked film is formed on the substrate, in which the stacked film includes at least one high-k dielectric layer and a first metal layer. The stacked film is patterned to form a plurality of gates in the first transistor region and the second transistor region, a dielectric layer is formed on the gates, and a portion of the dielectric layer is planarized until reaching the top of each gates. The first metal layer is removed from the gate of the second transistor region, and a second metal layer is formed over the surface of the dielectric layer and each gate for forming a plurality of metal gates in the first transistor region and the second transistor region.
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Chen Yi-Wen
Cheng Li-Wei
Chiang Tian-Fu
Chou Cheng-Hsien
Hsu Che-Hua
Hsu Winston
Mandala Victor A
Margo Scott
United Microelectronics Corp.
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