Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2009-07-23

2011-11-29

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27061

Reexamination Certificate

active

08067807

ABSTRACT:
In an LCD driver IC, a high-breakdown-voltage MISFET is mounted together with a typical low-breakdown-voltage MISFET. Because the high-breakdown-voltage MISFET has a gate oxide film thicker than that of the typical MISFET, the electrode of the high-breakdown-voltage MISFET is inevitably high in level. Accordingly, the depth of a gate contact is shallow so that process compatibility with the typical portion is necessary. In the present invention, in, e.g., the channel width direction of the high-breakdown-voltage MISFET, the boundary of a thick-film gate oxide region is located inwardly of the end of a gate electrode. At the gate electrode portion thus lowered in level, a gate contact is disposed so that the boundary of the thick film is located inwardly of the end of the gate electrode and between the gate contact and a channel end.

REFERENCES:
patent: 6780717 (2004-08-01), Yasuoka et al.
patent: 2006/0027880 (2006-02-01), Taya
patent: 2002-170888 (2002-06-01), None
patent: 2005-340627 (2005-12-01), None

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