Semiconductor memory device having DRAM-compatible...

Details Semiconductor memory device having DRAM-compatible... Semiconductor memory device having DRAM-compatible...

2009-10-02

2011-12-06

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S203000, C365S205000, C365S230030

Reexamination Certificate

active

08072794

ABSTRACT:
In synchronism with an active command, a row address and a column address are simultaneously received, and a page address is received in synchronism with a read command or a write command. Word drivers select a word line based on the row address, and column switches select a bit line based on the column address. A page address decoder selects any one of read/write amplifiers corresponding to each page based on the page address. With this configuration, a specification for a DRAM such as an access cycle can be satisfied without arranging an amplifier for each bit line, and thus it becomes possible to secure a compatibility with a DRAM while reducing a chip area.

REFERENCES:
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patent: 2005-158199 (2005-06-01), None

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