Plasma etching of semiconductor substrates

Details Plasma etching of semiconductor substrates Plasma etching of semiconductor substrates

1990-10-09

1991-07-23

Bueker, Richard

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156662, H01L 2100

Patent

active

050340921

ABSTRACT:
A method for plasma etching semiconductor materials using silicon tetrachloride and boron trichloride is provided. Less etch damage, a greater degree of anisotropy and a more controlled etch is provided by exposing a III-V compound semiconductor to the novel gas mixture.

REFERENCES:
patent: 4592800 (1986-06-01), Landau et al.
patent: 4855160 (1989-08-01), Luttmer et al.
patent: 4873176 (1989-10-01), Fisher

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