Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2009-08-17
2011-12-27
Doan, Theresa T (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S154000, C257S351000, C257S377000
Reexamination Certificate
active
08084309
ABSTRACT:
A method of fabricating an electronic structure is provided that includes forming a first conductivity doped first semiconductor material on the SOI semiconductor layer of a substrate. The SOI semiconductor layer has a thickness of less than 10 nm. The first conductivity in-situ doped first semiconductor material is removed from a first portion of the SOI semiconductor layer, wherein a remaining portion of the first conductivity in-situ doped first semiconductor material is present on a second portion of SOI semiconductor layer. A second conductivity in-situ doped second semiconductor material is formed on the first portion of the SOI semiconductor layer, wherein a mask prohibits the second conductivity in-situ doped semiconductor material from being formed on the second portion of the SOI semiconductor layer. The dopants from the first and second conductivity in-situ doped semiconductor materials are diffused into the first semiconductor layer to form dopant regions.
REFERENCES:
patent: 6084271 (2000-07-01), Yu et al.
patent: 6399970 (2002-06-01), Kubo et al.
patent: 6914303 (2005-07-01), Doris et al.
patent: 2005/0118826 (2005-06-01), Boyd et al.
Cheng Kangguo
Doris Bruce B.
Shahidi Ghavam G.
Doan Theresa T
International Business Machines - Corporation
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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