Creating spin-transfer torque in oscillators and memories

Details Creating spin-transfer torque in oscillators and memories Creating spin-transfer torque in oscillators and memories

2010-12-08

2011-11-22

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S175000, C365S145000

Reexamination Certificate

active

08064246

ABSTRACT:
A structure includes an electrically conductive material possessing spontaneous magnetization (“free magnet”) not in contact with an electrically resistive material possessing spontaneous magnetization (“pinned magnet”), and a spacer having free electrons to transfer spin between the electrically resistive material and the electrically conductive material. During operation, an existing direction of magnetization of the free magnet is changed to a new direction of magnetization, by a spin current generated by transfer of heat between at least the spacer and the pinned magnet. Thereafter, the new direction of magnetization of the free magnet is sensed. Many such structures are fabricated to have an easy axis of magnetic anisotropy in the free magnet, to implement memories that write data by transferring heat. Several such structures are fabricated to have an easy plane of magnetic anisotropy in the free magnet, to implement oscillators that generate an oscillating signal, on transfer of heat.

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