Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2010-04-19
2011-12-27
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S296000, C438S359000, C257SE21575, C257SE21579, C257SE21581
Reexamination Certificate
active
08084355
ABSTRACT:
A method of forming copper-comprising conductive lines in the fabrication of integrated circuitry includes depositing damascene material over a substrate. Line trenches are formed into the damascene material. Copper-comprising material is electrochemically deposited over the damascene material. The copper-comprising material is removed and the damascene material is exposed, and individual copper-comprising conductive lines are formed within individual of the line trenches. The damascene material is removed selectively relative to the conductive copper-comprising material. Dielectric material is deposited laterally between adjacent of the individual copper-comprising conductive lines. The deposited dielectric material is received against sidewalls of the individual copper-comprising conductive lines. A void is received laterally between immediately adjacent of the individual copper-comprising conductive lines within the deposited dielectric material. Other embodiments are contemplated.
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Ghyka Alexander
Micro)n Technology, Inc.
Nikmanesh Seahvosh
Wells St. John P.S.
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