Photosensitive integrated circuit equipped with a reflective...

Details Photosensitive integrated circuit equipped with a reflective... Photosensitive integrated circuit equipped with a reflective...

2006-11-21

2011-10-25

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S059000, C257S684000, C257SE21004, C257SE21022

Reexamination Certificate

active

08044443

ABSTRACT:
A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.

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French Search Report for FR 0511755 dated Apr. 27, 2006.

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