Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2009-03-17

2011-10-04

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S306000, C257S390000, C257SE27103, C257SE29309

Reexamination Certificate

active

08030700

ABSTRACT:
A semiconductor memory device includes: a semiconductor substrate; a stacked body provided on the semiconductor substrate and having a plurality of insulator layers and a plurality of conductive layers alternately stacked; a semiconductor layer provided inside a through-hole formed so as to pass through the stacked body and extending in a stacking direction of the insulator layers and the conductive layers; and a charge trap layer provided between the conductive layer and the semiconductor layer. A lower part in the semiconductor layer is narrower than an upper part therein, and at least the lowermost layer in the conductive layers is thinner than the uppermost layer therein.

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H. Tanaka et al.,“Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory”, 2007 Symposium on VLSI Technology Digest of Technical Papers, 1 page.
Yoshiaki Fukuzumi et al., “Optimal Integration and Characteristics of Vertical Array Devices for Ultra-High Density, Bit-Cost Scalable Flash Memory”, IEDM Tech. Digest, 2007, 4 pages.

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