Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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Details

C365S210100, C365S210140, C365S189080, C365S210130, C365S210150, C365S213000, C365S214000

Reexamination Certificate

active

08059480

ABSTRACT:
A semiconductor memory device includes a plurality of memory cells configured to correspond to each of a plurality of word lines for storing data; a plurality of reference memory cells configured to include first and second magnetic memory devices, whose lower electrodes are commonly connected to each other, to generate a reference current corresponding to each of the memory cells; and a sense amplification unit configured to sense and amplify the reference current and a data current corresponding to a memory cell connected to an activated word line among the word lines.

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Notice of Allowance issued from Korean Intellectual Property Office on Aug. 31, 2011.

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