Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2009-10-16
2011-10-11
Quach, Tuan N. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S791000, C257SE21261, C257SE23120, C438S778000, C438S780000
Reexamination Certificate
active
08035236
ABSTRACT:
A semiconductor device comprising curable polyorganosiloxane composites is provided where the composites contain at least 0.1 wt % of the 4thand/or 13thgroup elements of the periodic table. The cured polyorganosiloxane composites may be catalyst-free, have increased stability, and can be used as encapsulation resin at a temperature far lower than 300° C., have excellent light transmission properties (colorless transparency) in a wavelength region of from ultraviolet light to visible light, light resistance, heat resistance, resistance to moist heat and UV resistance, and has excellent adhesiveness toward metal, ceramics, and plastic surfaces over a long period of time.
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Gerbec Jeffrey A.
Hawker Craig J.
Nulwala Hunaid
Odukale Anika A.
Takizawa Kenichi
Berliner & Associates
Mitsubishi Chemical Corporation
Quach Tuan N.
The Regents of the University of California
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