Semiconductor device

Details Semiconductor device Semiconductor device

2007-09-28

2011-11-15

Gebremariam, Samuel (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S401000

Reexamination Certificate

active

08058688

ABSTRACT:
A semiconductor device includes: a semiconductor substrate; a first semiconductor layer of a first conductivity type provided on a major surface of the semiconductor substrate and having lower doping concentration than the semiconductor substrate; a plurality of first semiconductor column regions of the first conductivity type provided on the first semiconductor layer;a plurality of second semiconductor column regions of a second conductivity type provided on the first semiconductor layer, the second semiconductor column regions being adjacent to the first semiconductor column regions; a first semiconductor region; a second semiconductor region; a gate insulating film; a first main electrode; a second main electrode; and a control electrode. Doping concentrations in both the first and second semiconductor column region are low on the near side of the first semiconductor layer and high on the second main electrode side.

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