Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-11-14
2011-10-18
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S527000
Reexamination Certificate
active
08039376
ABSTRACT:
A method for forming a semiconductor structure. The method includes providing a semiconductor structure including a semiconductor substrate. The semiconductor substrate includes (i) a top substrate surface which defines a reference direction perpendicular to the top substrate surface and (ii) a semiconductor body region. The method further includes implanting an adjustment dose of dopants of a first doping polarity into the semiconductor body region by an adjustment implantation process. Ion bombardment of the adjustment implantation process is in the reference direction. The method further includes (i) patterning the semiconductor substrate resulting in side walls of the semiconductor body region being exposed to a surrounding ambient and then (ii) implanting a base dose of dopants of a second doping polarity into the semiconductor body region by a base implantation process. Ion bombardment of the base implantation process is in a direction which makes a non-zero angle with the reference direction.
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Clark, Jr. William F.
Nowak Edward Joseph
International Business Machines - Corporation
Kotulak Richard M.
Schmeiser Olsen & Watts
Smith Bradley K
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