Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-07-29

2011-11-29

Le, Thao (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29256, C257SE21417, C438S217000

Reexamination Certificate

active

08067801

ABSTRACT:
A semiconductor device is provided, which comprises a first transistor and a second transistor formed in a semiconductor layer. The first transistor includes a first source region and a first drain region sandwiching a first gate electrode with the first source region. The second transistor includes an LDD region and a drift region sandwiching the second gate electrode with the LDD region, and a second drain region adjacent to the drift region to sandwich the second gate electrode with the second source region. The first gate electrode has a first sidewall formed on sides thereof and the second gate electrode has a second sidewall formed on sides thereof. The width of the former along the first insulator differs from the width of the latter along the second insulator.

REFERENCES:
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patent: 7148552 (2006-12-01), Fujio et al.
patent: 2006/0017103 (2006-01-01), Szelag
patent: 2006/0105528 (2006-05-01), Cho et al.
patent: 2006/0141714 (2006-06-01), Lee
patent: 2006/0255369 (2006-11-01), Kim et al.
patent: 2007/0034985 (2007-02-01), Matsudai et al.
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patent: 2004-349372 (2004-12-01), None
patent: 2004-349377 (2004-12-01), None

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