Power semiconductor device

Details Power semiconductor device Power semiconductor device

2009-08-12

2011-10-04

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S287000, C257S401000, C257S500000, C257SE29256

Reexamination Certificate

active

08030706

ABSTRACT:
A semiconductor device according to an embodiment of the present invention includes a device part and a terminal part. The device includes a first semiconductor layer, and second and third semiconductor layers formed on the first semiconductor layer, and alternately arranged along a direction parallel to a surface of the first semiconductor layer, wherein the device part is provided with a first region and a second region, each of which includes at least one of the second semiconductor layers and at least one of the third semiconductor layers, and with regard to a difference value ΔN (=NA−NB) obtained by subtracting an impurity amount NBper unit length of each of the third semiconductor layers from an impurity amount NAper unit length of each of the second semiconductor layers, a difference value ΔNC1which is the difference value ΔN in the first region of the device part, a difference value ΔNC2which is the difference value ΔN in the second region of the device part, and a difference value ΔNTwhich is the difference value ΔN in the terminal part satisfy a relationship of ΔNC1>ΔNT>ΔNC2.

REFERENCES:
patent: 2008/0211020 (2008-09-01), Saito
patent: 2008/0246079 (2008-10-01), Saito et al.
patent: 2004-134714 (2004-04-01), None
patent: 2006-324432 (2006-11-01), None

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