Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-18
2011-11-15
Shingleton, Michael B (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S365000, C257S153000
Reexamination Certificate
active
08058694
ABSTRACT:
In a semiconductor device, such as a MOSFET or the like, which is a high-frequency LSI achieving a low noise figure and a high maximum oscillation frequency and which has unit cells with a ring-shaped gate electrode arranged in an array, gate drawing wires connecting together the gate electrode and gate contact pad portions are arranged on a region excluding a drain region and a source region, that is, on an isolation region. Bending portions of the ring-shaped gate electrode are all formed on the isolation region. This therefore permits an improvement in high frequency characteristics such as noise, the maximum oscillation frequency, and the like while eliminating unnecessary gate capacity addition, and also permits small characteristic variation even if a machining shape of the bending portions of the gate electrode is unstable.
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McDermott Will & Emery LLP
Panasonic Corporation
Shingleton Michael B
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