Split gate with different gate materials and work functions...

Details Split gate with different gate materials and work functions... Split gate with different gate materials and work functions...

2007-01-30

2011-11-15

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21428, C438S270000

Reexamination Certificate

active

08058687

ABSTRACT:
This invention discloses a trenched metal oxide semiconductor field effect transistor (MOSFET) cell. The trenched MOSFET cell includes a trenched gate opened from a top surface of the semiconductor substrate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The trenched gate further includes at least two mutually insulated trench-filling segments each filled with materials of different work functions. In an exemplary embodiment, the trenched gate includes a polysilicon segment at a bottom portion of the trenched gate and a metal segment at a top portion of the trenched gate.

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patent: 2006/0273382 (2006-12-01), Hshieh

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