Microstructure device including a metallization structure...

Details Microstructure device including a metallization structure... Microstructure device including a metallization structure...

2010-05-24

2011-11-01

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

08048796

ABSTRACT:
In a sophisticated metallization system of a semiconductor device, air gaps may be formed in a self-aligned manner on the basis of a sacrificial material, such as a carbon material, which is deposited after the patterning of a dielectric material for forming therein a via opening. Consequently, superior process conditions during the patterning of the via opening and the sacrificial material in combination with a high degree of flexibility in selecting appropriate materials for the dielectric layer and the sacrificial layer may provide superior uniformity and device characteristics.

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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2009 023 377.6 dated Oct. 5, 2010.

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