Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-10-09
2011-11-08
Yoha, Connie (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S185030, C257S421000
Reexamination Certificate
active
08054677
ABSTRACT:
A magnetic tunnel junction cell having a free layer and first pinned layer with perpendicular anisotropy, the cell including a coupling layer between the free layer and a second pinned layer, the coupling layer comprising a phase change material switchable from an antiferromagnetic state to a ferromagnetic state. In some embodiments, at least one actuator electrode proximate the coupling layer transfers a strain from the electrode to the coupling layer to switch the coupling layer from the antiferromagnetic state to the ferromagnetic state. Memory devices and methods are also described.
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Campbell Nelson Whipps LLC
Seagate Technology LLC
Yoha Connie
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