Semiconductor device

Details Semiconductor device Semiconductor device

2007-10-30

2011-11-08

Dang, Phuc (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21193, C257SE21426, C257S382000, C257S413000, C438S406000, C438S585000, C438S479000, C438S517000

Reexamination Certificate

active

08053837

ABSTRACT:
There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained.

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