Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-11-27
2011-10-11
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S614000, C438S622000, C438S667000, C257SE21597
Reexamination Certificate
active
08034704
ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of providing an element forming layer on a first surface of a semiconductor substrate, and providing an external connection terminal on a second surface of the semiconductor substrate opposite to the first surface so that the external connection terminal is electrically connected to the element forming layer through a via hole. The via hole is formed through the steps of forming a buried conductor layer on the first surface so as to electrically insulate the buried conductor layer from the semiconductor substrate, forming a communication hole on the second surface so as to communicate it with the buried conductor layer, and electrically connecting the buried conductor layer and the communication hole.
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Office Action issued by the Japanese Patent Office on Mar. 31, 2009 in connection to related Japanese Patent Application No. 2006-329179.
Komai Naoki
Nakamura Takuya
Lindsay, Jr. Walter L
Pompey Ron
SNR Denton US LLP
Sony Corporation
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