Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2009-11-02

2011-10-11

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S294000, C257S432000, C257S459000, C257S466000, C257S621000, C257SE31113, C257SE21575, C438S069000, C438S098000

Reexamination Certificate

active

08035143

ABSTRACT:
Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a semiconductor substrate formed on a first surface thereof with a readout circuitry and a photodiode area; a metal interconnection layer formed on the first surface; a connection via metal extending from the first surface to a second surface of the semiconductor substrate, the connection via metal having a projection part projecting from the second surface; an insulating layer formed on the first surface of the semiconductor substrate to expose the projection part while surrounding a portion of a lateral side of the projection part; and a metal pad formed on the insulating layer such that the metal pad covers the projection part, thereby shortening an optical path to reduce light loss and improve image sensitivity.

REFERENCES:
patent: 2003/0081069 (2003-05-01), Kim et al.
patent: 2005/0029643 (2005-02-01), Koyanagi
patent: 2008/0111169 (2008-05-01), Liu et al.
patent: 2008/0308893 (2008-12-01), Kirby et al.
patent: 2005-150463 (2005-06-01), None
patent: 2006-032497 (2006-02-01), None

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