Nanoelectronic structure and method of producing such

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S268000, C438S503000, C438S584000

Reexamination Certificate

active

08067299

ABSTRACT:
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.

REFERENCES:
patent: 5196396 (1993-03-01), Lieber
patent: 5252835 (1993-10-01), Lieber et al.
patent: 5332910 (1994-07-01), Haraguchi et al.
patent: 5362972 (1994-11-01), Yazawa et al.
patent: 5381753 (1995-01-01), Okajima et al.
patent: 5544617 (1996-08-01), Terui et al.
patent: 5840435 (1998-11-01), Lieber et al.
patent: 5858862 (1999-01-01), Westwater et al.
patent: 5897945 (1999-04-01), Lieber et al.
patent: 5899734 (1999-05-01), Lee
patent: 5976957 (1999-11-01), Westwater et al.
patent: 5997832 (1999-12-01), Lieber et al.
patent: 6130142 (2000-10-01), Westwater et al.
patent: 6130143 (2000-10-01), Westwater et al.
patent: 6159742 (2000-12-01), Lieber et al.
patent: 6190634 (2001-02-01), Lieber et al.
patent: 6307241 (2001-10-01), Awschalom et al.
patent: 6340822 (2002-01-01), Brown et al.
patent: 6455340 (2002-09-01), Chua et al.
patent: 6559468 (2003-05-01), Kuekes et al.
patent: 6586965 (2003-07-01), Kuekes
patent: 6596377 (2003-07-01), Hersee et al.
patent: 6693021 (2004-02-01), Motoki et al.
patent: 6709929 (2004-03-01), Zhang et al.
patent: 6716409 (2004-04-01), Hafner et al.
patent: 6743408 (2004-06-01), Lieber et al.
patent: 7303631 (2007-12-01), Conley, Jr. et al.
patent: 7309621 (2007-12-01), Conley, Jr. et al.
patent: 7335908 (2008-02-01), Samuelson et al.
patent: 7354850 (2008-04-01), Seifert et al.
patent: 7445742 (2008-11-01), Chen et al.
patent: 7521274 (2009-04-01), Hersee et al.
patent: 2002/0129761 (2002-09-01), Takami
patent: 2002/0130311 (2002-09-01), Lieber et al.
patent: 2002/0172820 (2002-11-01), Majumdar et al.
patent: 2002/0175408 (2002-11-01), Majumdar et al.
patent: 2003/0089899 (2003-05-01), Lieber et al.
patent: 2003/0102444 (2003-06-01), Deppert et al.
patent: 2003/0121764 (2003-07-01), Yang et al.
patent: 2003/0200521 (2003-10-01), DeHon et al.
patent: 2004/0175844 (2004-09-01), Yang et al.
patent: 2004/0213307 (2004-10-01), Lieber et al.
patent: 2004/0252737 (2004-12-01), Yi et al.
patent: 2004/0262636 (2004-12-01), Yang et al.
patent: 2005/0006673 (2005-01-01), Samuelson et al.
patent: 2005/0011431 (2005-01-01), Samuelson et al.
patent: 2005/0017171 (2005-01-01), Samuelson et al.
patent: 2005/0161662 (2005-07-01), Majumdar et al.
patent: 2005/0199886 (2005-09-01), Yi et al.
patent: 2006/0019470 (2006-01-01), Seifert et al.
patent: 2006/0057360 (2006-03-01), Samuelson
patent: 2006/0073680 (2006-04-01), Han et al.
patent: 2006/0112466 (2006-05-01), Den
patent: 2006/0125056 (2006-06-01), Samuelson et al.
patent: 2006/0189018 (2006-08-01), Yi et al.
patent: 2006/0223211 (2006-10-01), Mishra et al.
patent: 2007/0001220 (2007-01-01), Tombler, Jr. et al.
patent: 2007/0172183 (2007-07-01), Wang
patent: 2007/0206488 (2007-09-01), Thelander et al.
patent: 2007/0257264 (2007-11-01), Hersee et al.
patent: 2007/0286945 (2007-12-01), Lahnor et al.
patent: 2008/0036038 (2008-02-01), Hersee et al.
patent: 2008/0149946 (2008-06-01), Kim et al.
patent: 2010/0025673 (2010-02-01), Hu et al.
patent: 2010/0078055 (2010-04-01), Vidu et al.
patent: 0 443 920 (1991-08-01), None
patent: 0 544 408 (1993-06-01), None
patent: 0 838 865 (1998-04-01), None
patent: 0 544 408 (2000-01-01), None
patent: 1 221 722 (2002-07-01), None
patent: 1 314 189 (2003-05-01), None
patent: 1 342 075 (2003-09-01), None
patent: 2000-068493 (2000-03-01), None
patent: WO 95/02709 (1995-01-01), None
patent: WO 97/31139 (1997-08-01), None
patent: WO 01/03208 (2001-01-01), None
patent: WO 01/77726 (2001-10-01), None
patent: WO 01/84238 (2001-11-01), None
patent: WO 02/01648 (2002-01-01), None
patent: WO 02/17362 (2002-02-01), None
patent: WO 02/48701 (2002-06-01), None
patent: WO 02/080280 (2002-10-01), None
patent: WO 02/095883 (2002-11-01), None
patent: WO 03/005450 (2003-01-01), None
patent: WO 03/053851 (2003-07-01), None
patent: WO 03/063208 (2003-07-01), None
patent: WO 2004/010552 (2004-01-01), None
patent: WO 2004/038767 (2004-05-01), None
patent: WO 2006/135336 (2006-12-01), None
U.S. Appl. No. 10/613,071, filed Jul. 7, 2003, Samuelson et al.
U.S. Appl. No. 11/812,225, filed Jun. 15, 2007, Samuelson et al.
U.S. Appl. No. 12/520,125, filed Dec. 20, 2007, Pedersen et al.
U.S. Appl. No. 12/224,822, filed Mar. 7, 2007, Samuelson et al.
Abramson et al., “Fabrication and Characterization of a Nanowire/Polymer-Based Nanocomposite for a Prototype Thermoelectric Device”,Journal of Microelectromechanical Systems, vol. 13, No. 3, Jun. 2004, pp. 505-513.
Abramson et al., “Nanowire Composite Thermoelectric Devices”,Proceedings of IMECE2002, ASME International Mechanical Engineering Congress&Exposition, Nov. 17-22, 2002, pp. 7-11.
Akabori, M., et al., “InGaAs Nano-Pillar Array Formation on Partially Masked InP(111)B by Selective Area Metal-Organic Vapour Phase Egitaxial Growth for Two-Dimensional Photonic Crystal Application”,Nanotechnology, No. 14, Aug. 27, 2003, pp. 1071-1074.
Akabori, M., et al., “Selective Area MOVPE Growth of Two-Dimensional Photonic Crystals Having an Air-Hole Array and its Application to Air-Bridge-Type structure”,Physica E, No. 13, Jan. 1, 2002, pp. 446-450.
Alferov, Z., et al., “For developing semiconductor heterostructures used in high-speed-and opto-electronics”, Nov. 23, 2000, www.nobel.se.physics/laureates/2000/.
Awschalom, D.D. et al., “Spintronics”,Scientific American, Jun. 1, 2002, pp. 66-73, vol. 286, No. 6.
Bachtold, A., et al., “Logic circuits with carbon nanotube transistors”,Science, Nov. 9, 2001, pp. 1317-1320, vol. 294.
Bachtold, A., et al., “Scanned probe microscopy of electronic transport in carbon nanotubes”,Phys. Rev. Lett., Jun. 26, 2000, pp. 6082-6085, vol. 84, No. 26.
Barrelet et al., “Synthesis of CdS and ZnS Nanowires Using Single-Source Molecular Precursors”,J. Am. Chem. Soc., vol. 125, 2003, pp. 11498-11499.
Bennett, C., et al., “Quantum information and computation”,Nature, Mar. 16, 2000, pp. 247-255, vol. 404.
Bertness et al., “Catalyst-Free Growth of GaN Nanowires,” Journal of Electronic Materials, 2006, 35(4):576-580.
Bhat, R., et al., “Patterned Quantum Well Heterostructures Grown by OMCVD on Non-Planar Substrates: Applications to Extremely Narrow SQW Lasers”,Journal of Crystal Growth, Jan. 1, 1988, pp. 850-856, vol. 93.
Bindal et al., “The impact of silicon nano-wire technology on the design of single-work-function CMOS transistors and circuits,” Nanotechnology, 2006, 17:4340-4351.
Björk et al., “Few-Electron Quantum Dots in Nanowires”,Nano Letters, vol. 4, No. 9, Jul. 28, 2004, pp. 1621-1625.
Björk et al., “Heterostructures in One-Dimensional Nanowires”,Proceedings of 7thInternational Conference of Nanometer-Scale Science and Technology and 21stEuropean Conference on Surface Science, Jun. 24, 2002.
Bjork, M., “Semiconductor Nanowires and Devices”,Tekn lic thesis. Lund University, Nov. 1, 2002.
Bjork, M.T., “Nanowire resonant tunelling diodes”,Applied Physics Letters, Dec. 2, 2002, pp. 4458-4460, vol. 81, No. 23.
Bjork, M.T., et al., :One-dimensional heterostructures in semiconductor nanowhiskers,Applied Physics Letters, Feb. 11, 2002, pp. 1058-1060, vol. 80, No. 6.
Bjork, M.T., et al., “One-dimensional Steeplechase for Electrons Realized”,Nano Letters, Jan. 19, 2002, pp. 87-89, vol. 2, No. 2.
Borgstrom et al., “Size- and Shape-Controlled GaAs Nano-Whiskers Grown by MOVPE: A Growth Study”,Journ

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nanoelectronic structure and method of producing such does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanoelectronic structure and method of producing such, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanoelectronic structure and method of producing such will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4277917

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.