Temporary etchable liner for forming air gap

Details Temporary etchable liner for forming air gap Temporary etchable liner for forming air gap

2010-12-10

2011-10-04

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S639000, C438S675000

Reexamination Certificate

active

08030202

ABSTRACT:
An exemplary method lines the sidewalls of a first opening with a sacrificial material and then fills the first opening with a metallic conductor in a manner such that the metallic conductor contacts the substrate. Next, the method selectively removes the sacrificial material, to create at least one “second” opening along the metallic conductor within the first opening. The method selectively removes portions of the first insulator layer through the second opening to leave at least one air gap between the metallic conductor and the first insulator layer in the lower region of the second opening.

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