Method for forming semiconductor device having metallization...

Semiconductor device manufacturing: process – Making device array and selectively interconnecting – With electrical circuit layout

Reexamination Certificate

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Details

C438S618000, C438S275000, C438S585000, C438S152000, C257SE21575

Reexamination Certificate

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08034668

ABSTRACT:
A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the first protective layer, a semiconductor pattern on the first insulation layer in the first region, second transistors on the semiconductor pattern, a second protective layer covering the second transistors, the second protective layer having a thickness greater than that of the first protective layer, and a second insulation layer on the second protective layer and the first insulation layer of the second region.

REFERENCES:
patent: 6501127 (2002-12-01), Mori
patent: 2005/0179061 (2005-08-01), Jang et al.
patent: 2006/0028861 (2006-02-01), Han et al.
patent: 2000-049351 (2000-02-01), None
patent: 10-2005-0073956 (2005-07-01), None
patent: 10-2006-0012847 (2006-02-01), None

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