Semiconductor light-emitting element and method of producing...

Details Semiconductor light-emitting element and method of producing... Semiconductor light-emitting element and method of producing...

2008-08-27

2011-10-18

Le, Thao (Department: 2892)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S956000, C438S962000, C257S013000, C257S082000, C257SE21097, C257SE21131, C257SE31022, C257SE31033

Reexamination Certificate

active

08039369

ABSTRACT:
There is provided a semiconductor light-emitting element and a method of producing the same including high density and high quality quantum dots emitting light at a wavelength of 1.3 μm. A semiconductor light-emitting element has a first GaAs layer, a second InAs thin film layer having the plurality of InAs quantum dots formed on the first GaAs layer, a third InGaAs layer formed on the second InAs thin film layer having the plurality of InAs quantum dots, and a fourth GaAs layer formed on the third InGaAs layer, wherein the As source is As2.

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