Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2008-09-10

2011-11-22

Gaffin, Jeffrey A (Department: 2117)

Error detection/correction and fault detection/recovery

Pulse or data error handling

Digital data error correction

C714S764000, C365S200000

Reexamination Certificate

active

08065589

ABSTRACT:
A semiconductor memory device includes a memory cell array from which all bits of a data signal having a first number of the bits composed of a main data signal and an error detection/correction code data signal are simultaneously read, a sense amplifier for amplifying the read data signal, a selection unit for selecting a data signal having a second number of bits forming a part of the data signal amplified by the sense amplifier, and an error detection/correction unit for performing error detection and correction based on at least a part of the selected data signal having the second number of bits, wherein the selection by the selection unit is performed based on a row address.

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Japanese Notice of Reasons for Rejection, w/ English translation thereof, issued in Japanese Patent Application No. JP 2007-260850 dated Feb. 1, 2011.

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