Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-08-11
2011-11-22
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S409000, C257S484000, C438S140000, C438S282000
Reexamination Certificate
active
08063445
ABSTRACT:
Provided is a semiconductor device which includes a metal oxide semiconductor (MOS) transistor having high driving performance and high withstanding voltage with a thick gate oxide film. In the local oxidation-of-silicon (LOCOS) offset MOS transistor having high withstanding voltage, in order to prevent a gate oxide film (6) formed on a channel formation region (7) from being etched at a time of removing the gate oxide film (6) with a polycrystalline silicon gate electrode (8) being used as a mask to form a second conductivity type high concentration source region (4) and a second conductivity type high concentration drain region (5), a source field oxide film (14) is formed also on a source side of the channel formation region (7), and in addition, a length of a second conductivity type high concentration source field region (13) is optimized. Accordingly, it is possible to obtain a MOS transistor having high driving performance and high withstanding voltage with a thick gate oxide film.
REFERENCES:
patent: 6096589 (2000-08-01), Lee et al.
patent: 7196393 (2007-03-01), Suzuki et al.
Patent Abstracts of Japan, publication No. 2002-208694, publication date Jul. 26, 2002.
Kato Shinjiro
Saito Naoto
Adams & Wilks
Doan Theresa T
Seiko Instruments Inc.
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4273487