Solid-state image pickup device and method for manufacturing...

Details Solid-state image pickup device and method for manufacturing... Solid-state image pickup device and method for manufacturing...

Filed on

2009-06-17

Date issued

2011-10-18

Examiner

Thai, Luan C (Department: 2891)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C227S059000, C227S059000, C227S059000, C227S059000

Type

Reexamination Certificate

Status

active

Patent number

08039883

Description

ABSTRACT:
In a solid-state image pick up device, a first conduction type semiconductor layer which has a first surface side. A second surface side which is located the opposite side of the first surface side and an image sensor area. A photo-conversion area which is configured in the first surface side and charges electron by photoelectric conversion. A first diffusion area of second conduction type for isolation, wherein the first diffusion area surrounds the photo-conversion area and extends from the first surface side to the middle part of the semiconductor layer and a second diffusion area of second conduction type for isolation, wherein the second diffusion area extends from the second surface side to the bottom of the first diffusion layer.

REFERENCES:
patent: 6821809 (2004-11-01), Abe et al.
patent: 7675099 (2010-03-01), Hwang et al.
patent: 7709969 (2010-05-01), Yamamoto et al.
patent: 2008/0054165 (2008-03-01), Shimotsusa et al.
patent: 2008/0142856 (2008-06-01), Sato et al.
Yasushi Maruyama, et al. “A back-illuminated high-sensitivity small-pixel color CMOS image sensor with flexible layout of metal wiring”, ITE Technical Report vol. 30, No. 25, IST2006-14, CE2006-43(Mar. 2006) 4 pages (with English Abstract).

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