Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-18
2011-12-27
Le, Thao (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
08084799
ABSTRACT:
A memory cell includes a first electrode, a second electrode, and phase change material between the first electrode and the second electrode. The phase change material has a step-like programming characteristic. The first electrode, the second electrode, and the phase change material form a via or trench memory cell.
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Happ Thomas
Philipp Jan Boris
Dicke Billig & Czaja, PLLC
Le Thao
Qimonda AG
Warrior Tanika
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