Method of performing wear leveling with variable threshold

Details Method of performing wear leveling with variable threshold Method of performing wear leveling with variable threshold

2008-10-21

2011-12-20

Bataille, Pierre-Michel (Department: 2186)

Electrical computers and digital processing systems: memory

Storage accessing and control

Specific memory composition

C711S165000, C711SE12008

Reexamination Certificate

active

08082386

ABSTRACT:
A wear leveling limit and/or an overall erase count threshold used for activating wear leveling in a non-volatile memory may be adjusted by determining a stage according to a highest erase count, and determining the wear leveling limit and/or the overall erase count threshold corresponding to the stage. Wear leveling may then be performed according to the wear leveling limit and/or the overall erase count threshold.

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Yuan-Hao Chang, Jen-Wei Hsieh, and Tei-Wei Kuo. 2007. Endurance enhancement of flash-memory storage systems: an efficient static wear leveling design. In Proceedings of the 44th annual Design Automation Conference (DAC '07). ACM, New York, NY, USA, 212-217. DOI=10.1145/1278480.1278533 <http://doi.acm.org/10.1145/1278480.1278533>.

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