Semiconductor device with a gate having a bulbous area and a...

Details Semiconductor device with a gate having a bulbous area and a... Semiconductor device with a gate having a bulbous area and a...

2009-04-09

2011-10-04

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S330000

Reexamination Certificate

active

08030715

ABSTRACT:
A semiconductor device with a gate having a bulbous area and a flattened area underneath the bulbous are is presented. The semiconductor device includes a semiconductor substrate, an isolation layer, a gate insulation layer, and gates. The semiconductor substrate has recess parts that have first grooves which have bulbous-shaped profiles and second vertically flattened profile grooves which extend downward from the first grooves. The gates are formed in the recess parts in which the gate insulation layer is double layered in the bulbous profile areas and is single layered in the flattened profile areas.

REFERENCES:
patent: 5506432 (1996-04-01), Kurusu
patent: 7541656 (2009-06-01), Kim et al.
patent: 2006-097432 (2006-04-01), None
patent: 2006-112218 (2006-04-01), None
patent: 1020040054248 (2004-06-01), None
patent: 1020090001392 (2009-01-01), None
Derwent 12421320, Jan. 2004, Korean, Kim.

Affiliated with

Also associated with

Rating

Semiconductor device with a gate having a bulbous area and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with a gate having a bulbous area and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with a gate having a bulbous area and a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4269125