Semiconductor device having carbon nanotubes and method for...

Details Semiconductor device having carbon nanotubes and method for... Semiconductor device having carbon nanotubes and method for...

2007-12-17

2011-11-15

Dickey, Thomas L (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

C257SE51005, C438S670000

Reexamination Certificate

active

08058112

ABSTRACT:
A semiconductor device having good switching characteristics even metallic CNTs are included and a manufacturing method thereof are provided. The semiconductor device includes a source electrode; a drain electrode; and a channel layer formed between the source electrode and the drain electrode and including a carbon nanotube group. The carbon nanotube group includes conductive carbon nanotubes having a characteristic of a conductive material and semiconductive carbon nanotubes having a characteristic of a semiconductive material. The density of the carbon nanotube group is the density where the source electrode and the drain electrode are connected to each other through all of the carbon nanotube group and not connected to each other only through the conductive carbon nanotubes.

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Yutaka Ohno, et al., “Engineering Carbon Nanotube Field-Effect Transistors”, Japanese Journal of Applied Physics, No. 44, vol. 4A, pp. 1592-1595, 2005.
Philip G. Collins, et al., “Engineering Carbon Nanatubes and Nanotube Circuits Using Electrical Breakdown”, Science, No. 292 (2001), p. 706.

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