Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-07-23
2011-10-18
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23001
Reexamination Certificate
active
08039963
ABSTRACT:
A semiconductor device of the present invention includes a seal ring structure. The seal ring structure includes a first metal layer including a though hole, the through hole having a bottom portion filled with an insulating material, and a second metal layer formed on the first metal layer. The second metal layer has a projected portion projecting from a bottom of the second metal layer and the projected portion is inserted into a top portion of the through hole.
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patent: 7019400 (2006-03-01), Iguchi et al.
patent: 2004/0188845 (2004-09-01), Iguchi et al.
patent: 2006/0001165 (2006-01-01), Tokitoh et al.
patent: 1532927 (2004-09-01), None
patent: 2005-167198 (2005-06-01), None
patent: 2006-5011 (2006-01-01), None
Dickey Thomas L
McGinn IP Law Group PLLC
Renesas Electronics Corporation
Yushin Nikolay
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