Semiconductor device including a columnar intermediate...

Details Semiconductor device including a columnar intermediate... Semiconductor device including a columnar intermediate...

2008-09-19

2011-11-15

Nguyen, Ha Tran T (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S332000, C438S270000, C438S272000, C438S273000, C438S587000

Reexamination Certificate

active

08058686

ABSTRACT:
A semiconductor device includes field effect transistors, each having a semiconductor layer formed on a major surface of a semiconductor substrate, a base region formed in a surface layer portion of a semiconductor layer, a source region formed in a surface layer portion of the base region, a source electrode formed on the base region and the source region, a gate electrode formed on the semiconductor layer and the base region via a gate insulating film interposed therebetween, and a drain electrode formed on a back surface of the semiconductor substrate, and which are placed side by side. A columnar intermediate region is formed in its corresponding predetermined region of the surface layer portion of the semiconductor layer placed below each gate electrode. Connection regions are formed in the surface layer portion of the semiconductor layer to contact the intermediate region and the base regions.

REFERENCES:
patent: 4642674 (1987-02-01), Schoofs
patent: 6566708 (2003-05-01), Grover et al.
patent: 7372100 (2008-05-01), Saito
patent: 2003-318397 (2003-11-01), None

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