Methods of forming conductive contacts to source/drain...

Details Methods of forming conductive contacts to source/drain... Methods of forming conductive contacts to source/drain...

2006-09-21

2011-12-27

Mitchell, James (Department: 2813)

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

C438S629000, C438S672000, C438S675000, C257S758000, C257S759000, C257S760000, C257S774000, C257SE21203

Reexamination Certificate

active

08084142

ABSTRACT:
The invention comprises methods of forming a conductive contact to a source/drain region of a field effect transistor, and methods of forming local interconnects. In one implementation, a method of forming a conductive contact to a source/drain region of a field effect transistor includes providing gate dielectric material intermediate a transistor gate and a channel region of a field effect transistor. At least some of the gate dielectric material extends to be received over at least one source/drain region of the field effect transistor. The gate dielectric material received over the one source/drain region is exposed to conditions effective to change it from being electrically insulative to being electrically conductive and in conductive contact with the one source/drain region. Other aspects and implementations are contemplated.

REFERENCES:
patent: 3349474 (1967-10-01), Rauscher
patent: 3772101 (1973-11-01), Chumbres et al.
patent: 3934057 (1976-01-01), Moreau et al.
patent: 4086074 (1978-04-01), Minot et al.
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4622735 (1986-11-01), Shibata
patent: 4645562 (1987-02-01), Liao et al.
patent: 4683645 (1987-08-01), Naguib et al.
patent: 4693910 (1987-09-01), Nakajima et al.
patent: 4766090 (1988-08-01), Coquin et al.
patent: 5099304 (1992-03-01), Takemura et al.
patent: 5236865 (1993-08-01), Sandhu et al.
patent: 5275695 (1994-01-01), Chang et al.
patent: 5406123 (1995-04-01), Narayan
patent: 5444024 (1995-08-01), Anjum et al.
patent: 5470784 (1995-11-01), Coleman
patent: 5470794 (1995-11-01), Anjum et al.
patent: 5561082 (1996-10-01), Matsuo et al.
patent: 5670298 (1997-09-01), Hur
patent: 5677102 (1997-10-01), Shiihara
patent: 5904517 (1999-05-01), Gardner et al.
patent: 5955244 (1999-09-01), Duval
patent: 5994194 (1999-11-01), Lammert
patent: 5998264 (1999-12-01), Wu
patent: 6013582 (2000-01-01), Ionov et al.
patent: 6037239 (2000-03-01), Jennings
patent: 6096621 (2000-08-01), Jennings
patent: 6096634 (2000-08-01), Nguyen
patent: 6130140 (2000-10-01), Gonzalez
patent: 6133105 (2000-10-01), Chen et al.
patent: 6133116 (2000-10-01), Kim et al.
patent: 6156674 (2000-12-01), Li et al.
patent: 6165834 (2000-12-01), Agarwal et al.
patent: 6169019 (2001-01-01), Takagi
patent: 6177235 (2001-01-01), Francou et al.
patent: 6180465 (2001-01-01), Gardner et al.
patent: 6188097 (2001-02-01), Derderian et al.
patent: 6207485 (2001-03-01), Gardner et al.
patent: 6238994 (2001-05-01), Derderian et al.
patent: 6255035 (2001-07-01), Minter et al.
patent: 6277709 (2001-08-01), Wang et al.
patent: 6277728 (2001-08-01), Ahn et al.
patent: 6281100 (2001-08-01), Yin et al.
patent: 6291363 (2001-09-01), Yin et al.
patent: 6297527 (2001-10-01), Agarwal et al.
patent: 6350560 (2002-02-01), Sahbari
patent: 6376149 (2002-04-01), Grober et al.
patent: 6380611 (2002-04-01), Yin et al.
patent: 6383723 (2002-05-01), Iyer et al.
patent: 6399982 (2002-06-01), Derderian et al.
patent: 6440793 (2002-08-01), Divakaruni et al.
patent: 6465325 (2002-10-01), Ridley et al.
patent: 6511896 (2003-01-01), Basceri et al.
patent: 6548854 (2003-04-01), Kizilyalli et al.
patent: 6582861 (2003-06-01), Buxbaum et al.
patent: 6582888 (2003-06-01), Herbst et al.
patent: 6608343 (2003-08-01), Derderian et al.
patent: 6613240 (2003-09-01), Skinner et al.
patent: 6617250 (2003-09-01), Basceri et al.
patent: 6649466 (2003-11-01), Basceri et al.
patent: 6720638 (2004-04-01), Tran
patent: 6744093 (2004-06-01), Agarwal et al.
patent: 6746916 (2004-06-01), Agarwal et al.
patent: 6753618 (2004-06-01), Basceri et al.
patent: 6770501 (2004-08-01), Burnham et al.
patent: 6777739 (2004-08-01), Agarwal et al.
patent: 6780728 (2004-08-01), Tran
patent: 6780766 (2004-08-01), Basceri et al.
patent: 6794721 (2004-09-01), Clevenger et al.
patent: 6817086 (2004-11-01), Lu et al.
patent: 6838363 (2005-01-01), Wieczorek et al.
patent: 6844131 (2005-01-01), Oberlander et al.
patent: 6900497 (2005-05-01), Agarwal et al.
patent: 6943126 (2005-09-01), Narayanan et al.
patent: 6956980 (2005-10-01), Nagata et al.
patent: 6969677 (2005-11-01), Derderian et al.
patent: 7026243 (2006-04-01), Basceri
patent: 7265406 (2007-09-01), Kellar et al.
patent: 2001/0006759 (2001-07-01), Shipley, Jr. et al.
patent: 2002/0064969 (2002-05-01), Havemann
patent: 2002/0076879 (2002-06-01), Lee et al.
patent: 2002/0196651 (2002-12-01), Weis
patent: 2003/0013272 (2003-01-01), Hong et al.
patent: 2003/0045060 (2003-03-01), Ahn et al.
patent: 2003/0045078 (2003-03-01), Ahn et al.
patent: 2003/0205729 (2003-11-01), Basceri et al.
patent: 2003/0211729 (2003-11-01), Lee et al.
patent: 2003/0213987 (2003-11-01), Basceri et al.
patent: 2003/0219942 (2003-11-01), Choi et al.
patent: 2004/0043228 (2004-03-01), Derderian et al.
patent: 2004/0046197 (2004-03-01), Basceri et al.
patent: 2004/0219736 (2004-11-01), Yoshitaka
patent: 2004/0224471 (2004-11-01), Clevenger et al.
patent: 2004/0245559 (2004-12-01), Pontoh et al.
patent: 2004/0245560 (2004-12-01), Pontoh et al.
patent: 2005/0035460 (2005-02-01), Tseng
patent: 2005/0244571 (2005-11-01), Walheim et al.
patent: 2005/0266619 (2005-12-01), Brask et al.
patent: 2005/0266664 (2005-12-01), Harrison et al.
patent: 2005/0285213 (2005-12-01), Datta et al.
patent: 2006/0183277 (2006-08-01), Brask et al.
patent: 0851473 (1998-07-01), None
patent: 2002-323775 (2002-11-01), None
Abstract: Basceri et al.,Atomic Layer Deposition for Nanoscale Cu Metalluzation, 10 pages (pre-Sep. 2003).
Chang et al.,Silicon surface treatments in advanced MOS gate processing, 72 Microelectronic Engineering, pp. 130-135 (2004).
En et al.,Plasma immersion ion implantation reactor design considerations for oxide charging, 85 Surface and Coatings Technology, pp. 64-69 (1996).
Ku et al.,The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self-Aligned Silicide Technology, 137 J. Electrochem Soc., No. 2, pp. 728-740 (Feb. 1990).
Lemberger et al.,electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors, 72 Microelectronic Engineering, pp. 315-320 (2004).
Abstract: Lin et al.,How to Eliminate Voiding in Porous Low-k Dielectrics and the Mechanism of Void Formation, 4 pages (pre-Sep. 2003).
Lu et al.,Effects of the TaNxinterface layer on doped tantalum oxide high-k films, J. Vacuum, 9 pages (Elsevier Ltd, 2004).
Park et al.,COB Stack DRAM Cell Technology beyond 100 nm Technology Node(invited paper), 3 pages, (pre-Sep. 2003).
Robertson et al.,Atomic structure, band offsets, growth and defects at high-K oxide:Si interfaces, 72 Microelectronic Engineering, pp. 112-120 (2004).
Rubin et al.,Shallow-Junction Diode Formation by Implantation of Arsenic and Boron Through Titanium-Silicide Films and . . ., 37 IEEE Transactions on Electron Devices, No. 1, pp. 183-190 (Jan. 1990).
Singh et al.,High and Low dielectric Constant Materials, The Electrochemical Society Interface, pp. 26-30 (Summer 1999).
U.S. Appl. No. 10/609,311, filed Jun. 2003, Yates.
U.S. Appl. No. 10/655,997, filed Sep. 2003, Daley.
U.S. Appl. No. 10/689,958, filed Oct. 2003, Basceri.
U.S. Appl. No. 10/879,367, filed Jun. 2004, Blalock et al.
U.S. Appl. No. 10/822,118, filed Apr. 2004, Sandhu et al.
U.S. Appl. No. 10/932,218, filed Sep. 2004, Basceri et al.

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