Silicon-based visible and near-infrared optoelectric devices

Details Silicon-based visible and near-infrared optoelectric devices Silicon-based visible and near-infrared optoelectric devices

2010-05-10

2011-12-20

Ngo, Ngan (Department: 2893)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

By application of corpuscular or electromagnetic radiation

C438S663000, C438S940000, C257SE21347, C257SE21475

Reexamination Certificate

active

08080467

ABSTRACT:
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

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