Double gyroid structure nanoporous films and nanowire networks

Details Double gyroid structure nanoporous films and nanowire networks Double gyroid structure nanoporous films and nanowire networks

2007-11-01

2011-12-20

Ahmadi, Mohsen (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S758000, C438S781000, C438S782000, C438S784000, C438S778000, C257SE21012, C257SE21013, C257SE21151, C257SE21273

Reexamination Certificate

active

08080483

ABSTRACT:
A method of forming a nanoporous film is disclosed. The method comprises forming a coating solution including clusters, surfactant molecules, a solvent, and one of an acid catalyst and a base catalyst. The clusters comprise inorganic groups. The method further comprises aging the coating solution for a time period to select a predetermined phase that will self-assemble and applying the coating solution on a substrate. The method further comprises evaporating the solvent from the coating solution and removing the surfactant molecules to yield the nanoporous film.

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