Semiconductor memory device and associated local sense...

Details Semiconductor memory device and associated local sense... Semiconductor memory device and associated local sense...

2010-02-26

2011-12-20

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S203000, C365S205000

Reexamination Certificate

active

08081530

ABSTRACT:
A semiconductor memory device comprises a plurality of memory cells, a bit line sense amplifier, a local sense amplifier, and a sense amplifier. The memory cells are connected between a word line and a bit line pair, and the bit line sense amplifier is configured to amplify voltages of data from the bit line pair and then transmits the data to a local data line pair. The local sense amplifier is configured to amplify voltages of the data from the local data line pair and transmit the data to a global data line pair in response to first and second control signals, and the sense amplifier is configured to amplify the voltages of the data from the global data line pair and transmit the data to an input/output line pair during a read operation. The local sense amplifier comprises a first read circuit, a second read circuit, and a write circuit, and when the memory device performs the read operation, the data is transmitted from the first read circuit to the write circuit via the second read circuit.

REFERENCES:
patent: 6075728 (2000-06-01), Inoue et al.
patent: 6212109 (2001-04-01), Proebsting
patent: 7002858 (2006-02-01), Lee
patent: 7417911 (2008-08-01), Kuroda
patent: 2001/0019512 (2001-09-01), Hidaka
patent: 2006/0023555 (2006-02-01), Morishima
patent: 2009/0086550 (2009-04-01), Kwak

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