Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-05-28
2011-10-18
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29024
Reexamination Certificate
active
08039899
ABSTRACT:
An electrostatic discharge protection device includes a first well comprising a MOS transistor; a second well comprising a first impurity region to which a first voltage is applied, and a second impurity region connected to an input/output pad, the second well being disposed adjacent to the first well; and a third well comprising a third impurity region to which the first voltage is applied, the third well being disposed adjacent to the second well.
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Notice of Allowance issued from Korean Intellectual Property Office on Jul. 28, 2010.
Hynix / Semiconductor Inc.
IP & T Group LLP
Nguyen Ha Tran T
Quinto Kevin
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