Manufacturing method of silicon nozzle plate and...

Details Manufacturing method of silicon nozzle plate and... Manufacturing method of silicon nozzle plate and...

2007-05-25

2011-10-11

Ahmed, Shamim (Department: 1713)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S027000

Reexamination Certificate

active

08034247

ABSTRACT:
A manufacturing method of a silicon nozzle plate, having; a film forming process to provide the film representing an etching mask for etching the silicon substrate on a surface of the silicon substrate; a pattern film forming to form a pattern film by partially removing the film based on a nozzle hole forming pattern and an outer shape forming pattern; a silicon substrate etching process to form nozzle holes based on the nozzle hole forming pattern representing the etching mask, and to form a half etching portion at least in a part of the silicon substrate based on the outer shape forming pattern; and a silicon substrate separating process to separate the silicon substrate by splitting along the half etching portion.

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International Search Report for Patent Application No. EP 07 25 2095 mailed Sep. 28, 2007.
European Search Report for Application No. 07252095.0-2304 dated Sep. 28, 2007.

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