Conductive oxide-deposited substrate and method for...

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Ionized irradiation

Reexamination Certificate

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C257S043000

Reexamination Certificate

active

08039405

ABSTRACT:
A method for producing a conductive oxide-deposited substrate including depositing a conductive oxide thin film over a substrate, subjecting the conductive oxide thin film to heat treatment by irradiating with a condensed laser beam so as to be thermally changed in part, and subjecting the conductive oxide thin film to etching treatment so as to remove a part which has not been thermally changed, wherein the conductive oxide thin film absorbs the laser beam, and at least a part of the conductive oxide thin film is an amorphous phase.

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Kenji Nomura et al., “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors”, Nature, vol. 432, Nov. 25. 2004, pp. 488-492.

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