Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-05-05
1999-03-02
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
H01L 29792
Patent
active
058775269
ABSTRACT:
In the crystal structure of a polysilicon thin film having a field effect mobility .mu..sub.FE of about 80 cm.sup.2 /V.sec, a grain size is about 200 nm and a crystallite size on the (111) plane is about 180 nm. The crystal size corresponds to the size of a completely monocrystallized portion of a grain. The condition of obtaining a field effect mobility .mu..sub.FE of about 80 cm.sup.2 /V.sec is that the crystallite size on the (111) plane is at least 180 nm (measured value). By taking the crystallite size into consideration, it becomes possible to achieve a high field effect mobility .mu..sub.FE which cannot be obtained merely by increasing the grain size.
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Meier Stephen D.
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