Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2010-03-24
2011-11-01
Mai, Anh (Department: 2829)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S397000
Reexamination Certificate
active
08048756
ABSTRACT:
A microelectronic substrate and method for removing adjacent conductive and nonconductive materials from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a substrate material (such as borophosphosilicate glass) having an aperture with a conductive material (such as platinum) disposed in the aperture and a fill material (such as phosphosilicate glass) in the aperture adjacent to the conductive material. The fill material can have a hardness of about 0.04 GPa or higher, and a microelectronics structure, such as an electrode, can be disposed in the aperture, for example, after removing the fill material from the aperture. Portions of the conductive and fill material external to the aperture can be removed by chemically-mechanically polishing the fill material, recessing the fill material inwardly from the conductive material, and electrochemically-mechanically polishing the conductive material. The hard fill material can resist penetration by conductive particles, and recessing the fill material can provide for more complete removal of the conductive material external to the aperture.
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Blalock Guy T.
Lee Whonchee
Meikle Scott G.
Mai Anh
Micro)n Technology, Inc.
Perkins Coie LLP
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